Low-voltage bidirectional protection diode
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United States of America Patent
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Sep 17, 2013
Grant Date -
May 26, 2011
app pub date -
Nov 16, 2010
filing date -
Nov 24, 2009
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Abstract
A vertical bidirectional protection diode including, on a heavily-doped substrate of a first conductivity type, first, second, and third regions of the first, second, and first conductivity types, these regions all having a doping level greater than from 2 to 5×1019 atoms/cm3 and being laterally delimited by an insulated trench, each of these regions having a thickness smaller than 4 μm.
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