Conductive filament based memory elements and methods with improved data retention and/or endurance

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United States of America Patent

PATENT NO 8531867
SERIAL NO

13464895

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Abstract

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A memory element can include a memory layer formed between two electrodes; at least one element within the memory layer that is oxidizable in the presence of an electric field applied across the electrodes; and an inhibitor material incorporated into at least a portion of the memory layer that decreases an oxidation rate of the at least one element within the memory layer with respect to the memory layer alone. Methods of forming such a memory element are also disclosed.

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Patent Owner(s)

Patent OwnerAddress
ADESTO TECHNOLOGIES CORPORATION1250 BORREGAS AVENUE SUNNYVALE CA 94089

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gallo, Antonio R San Mateo, US 17 221

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