Fabrication of nanovoid-imbedded bismuth telluride with low dimensional system
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United States of America Patent
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Sep 10, 2013
Grant Date -
May 19, 2011
app pub date -
Dec 3, 2010
filing date -
Jul 31, 2006
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Abstract
A new fabrication method for nanovoids-imbedded bismuth telluride (Bi—Te) material with low dimensional (quantum-dots, quantum-wires, or quantum-wells) structure was conceived during the development of advanced thermoelectric (TE) materials. Bismuth telluride is currently the best-known candidate material for solid-state TE cooling devices because it possesses the highest TE figure of merit at room temperature. The innovative process described here allows nanometer-scale voids to be incorporated in Bi—Te material. The final nanovoid structure such as void size, size distribution, void location, etc. can be also controlled under various process conditions.
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