Process for forming a planar diode using one mask
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United States of America Patent
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Sep 3, 2013
Grant Date -
Sep 28, 2006
app pub date -
Mar 25, 2005
filing date -
Mar 25, 2005
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Abstract
A planar diode and method of making the same employing only one mask. The diode is formed by coating a substrate with an oxide, removing a central portion of the oxide to define a window through which dopants are diffused. The substrate is given a Ni/Au plating to provide ohmic contact surfaces, and the oxide on the periphery of the window is coated with a polyimide passivating agent overlying the P/N junction.
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