Ultraviolet light emitting diode devices and methods for fabricating the same

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United States of America Patent

PATENT NO 8525198
APP PUB NO 20120018753A1
SERIAL NO

13262049

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Abstract

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A UV LED device and the method for fabricating the same are provided. The device has aluminum nitride nucleating layers, an intrinsic aluminum gallium nitride epitaxial layer, an n-type aluminum gallium nitride barrier layer, an active region, a first p-type aluminum gallium nitride barrier layer, a second p-type aluminum gallium nitride barrier layer, and a p-type gallium nitride cap layer arranged from bottom to top on a substrate. A window region is etched in the p-type gallium nitride cap layer for emitting the light generated.

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Patent Owner(s)

Patent OwnerAddress
XIDIAN UNIVERSITY710071 XI'AN ELECTRONIC AND SCIENCE UNIVERSITY 2 TAIBAI SOUTH ROAD SHAANXI XI'AN XI'AN CITY SHAANXI PROVINCE 710071

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hao, Yue Shaanxi, CN 15 12
Li, Peixian Shaanxi, CN 1 11
Ma, Xiaohua Shaanxi, CN 25 58
Yang, Ling Shaanxi, CN 192 1346
Zhou, Xiaowei Shaanxi, CN 25 44

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