Backside illumination semiconductor image sensor

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United States of America Patent

PATENT NO 8513761
APP PUB NO 20100193845A1
SERIAL NO

12697964

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Abstract

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A backside illumination semiconductor image sensor, wherein each photodetection cell includes a semiconductor body of a first conductivity type of a first doping level delimited by an insulation wall, electron-hole pairs being capable in said body after a backside illumination; on the front surface side of said body, a ring-shaped well of the second conductivity type, this well delimiting a substantially central region having its upper portion of the first conductivity type of a second doping level greater than the first doping level; and means for controlling the transfer of charge carriers from said body to said upper portion.

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Patent Owner(s)

Patent OwnerAddress
STMICROELECTRONICS (GRENOBLE 2) SAS12 RUE JULES HOROWITZ GRENOBLE 38000

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Descure, Pierrick Saint-Ismier, FR 10 125
Roy, François Seyssins, FR 48 618

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