Light emitting diode structure having two lighting structures stacked together and driven by alternating current

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United States of America Patent

PATENT NO 8513690
APP PUB NO 20120025237A1
SERIAL NO

12941091

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Abstract

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A light emitting diode structure includes an electrically conductive substrate, a first lighting structure having a first n-type semiconductor layer, a first active layer and a first p-type semiconductor layer and a second lighting structure having a second n-type semiconductor layer, a second active layer and a second p-type semiconductor layer. The first n-type semiconductor layer is electrically connected with the second p-type semiconductor layer and the first p-type semiconductor layer is electrically connected with the second n-type semiconductor layer. A first transparent, conductive layer is formed on the first lighting structure and a second transparent, conductive layer is formed on the second lighting structure. The first transparent, conductive layer and the second transparent, conductive layer are connected together to combine the first lighting structure with the second lighting structure.

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Patent Owner(s)

Patent OwnerAddress
FOXSEMICON INTEGRATED TECHNOLOGY INCNO 16 KE-JUNG RD SCIENCE-BASED INDUSTRIAL PARK CHU-NAN MIAO-LI HSIEN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lai, Chih-Ming Miao-Li Hsien, TW 485 10832

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