Manufacturing a microelectronic device comprising silicon and germanium nanowires integrated on a same substrate

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United States of America Patent

PATENT NO 8513125
APP PUB NO 20110070734A1
SERIAL NO

12871326

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Abstract

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A method for manufacturing a device comprising a structure with nanowires based on a semiconducting material such as Si and another structure with nanowires based on another semiconducting material such as SiGe, and is notably applied to the manufacturing of transistors.

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Patent Owner(s)

Patent OwnerAddress
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES25 RUE LEBLANC BÂTIMENT "LE PONANT D" PARIS F-75015

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Damlencourt, Jean-Francois Laval, FR 16 238
Heitzmann, Michel Crolles, FR 12 282
Saracco, Emeline Grenoble, FR 15 87

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