Plasma assisted metalorganic chemical vapor deposition (MOCVD) system
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United States of America Patent
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Aug 20, 2013
Grant Date -
Dec 9, 2004
app pub date -
Jun 5, 2003
filing date -
Jun 5, 2003
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Abstract
The present invention is a high-throughput, ultraviolet (UV) assisted metalorganic chemical vapor deposition (MOCVD) system for the manufacture of HTS-coated tapes. The UV-assisted MOCVD system of the present invention includes a UV source that irradiates the deposition zone and improves the thin film growth rate. The MOCVD system further enhances the excitation of the precursor vapors and utilizes an atmosphere of monatomic oxygen (O) rather than the more conventional diatomic oxygen (O2) in order to optimize reaction kinetics and thereby increase the thin film growth rate. In an alternate embodiment, a microwave plasma injector is substituted for the UV source.
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