Driver circuit for switching device

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United States of America Patent

PATENT NO 8508258
APP PUB NO 20070221994A1
SERIAL NO

11657692

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Abstract

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A driver circuit that lowers the dependence of the loss in the wide gap semiconductor device upon the temperature is provided. A gate driver circuit for voltage driven power semiconductor switching device includes a power semiconductor switching device, a driver circuit for supplying a drive signal to a gate terminal of the switching device with reference to an emitter control terminal or a source control terminal of the switching device, and a unit for detecting a temperature of the switching device. The temperature of the power semiconductor switching device is detected, and a gate drive voltage or a gate drive resistance value is changed based on the detected temperature.

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Patent Owner(s)

Patent OwnerAddress
HITACHI LTDCHIYODA-KU TOKYO 100-8280

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Funakoshi, Sunao Kasumigaura, JP 19 365
Ishikawa, Katsumi Hitachinaka, JP 67 886
Onose, Hidekatsu Hitachi, JP 28 413
Sakamoto, Kozo Hitachinaka, JP 23 785

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