Semiconductor device and method for fabricating the same
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United States of America Patent
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Aug 6, 2013
Grant Date -
Oct 1, 2009
app pub date -
Jun 11, 2009
filing date -
Nov 16, 2007
priority date (Note) -
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Abstract
A semiconductor device includes an isolation region (11a) formed in a semiconductor substrate (10), an active region made of the semiconductor substrate (10) surrounded by the isolation region (11a) and having a trench portion, a MIS transistor of a first-conductivity type having a gate electrode (13) formed on the active region, a first sidewall (19) formed on a side surface of the gate electrode between the gate electrode (13) and the trench portion as viewed in the top, and a silicon mixed crystal layer (21) of the first-conductivity type, the trench portion being filled with the silicon mixed crystal layer (21) of the first-conductivity type, a substrate region provided between the trench portion and the isolation region (11a, 11b) and made of the semiconductor substrate (10), and an impurity region (22) of the first-conductivity type formed in the substrate region. The silicon mixed crystal layer (21) generates stress in a channel region of the active region.
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