Method of NiSiGe epitaxial growth by introducing Al interlayer
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United States of America Patent
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Aug 6, 2013
Grant Date -
May 24, 2012
app pub date -
Jul 25, 2011
filing date -
Nov 4, 2010
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Abstract
The present invention discloses a method of NiSiGe epitaxial growth by introducing Al interlayer, comprising the deposition of an Al thin film on the surface of SiGe layer, subsequent deposition of a Ni layer on Al thin film and then the annealing process for the reaction between Ni layer and SiGe material of SiGe layer to form NiSiGe material. Due to the barrier effect of Al interlayer, NiSiGe layer features a single crystal structure, a flat interface with SiGe substrate and a thickness of up to 0.3 nm, significantly enhancing interface performance.
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