Two-transistor floating-body dynamic memory cell

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United States of America Patent

PATENT NO 8498140
APP PUB NO 20100329043A1
SERIAL NO

12681289

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Abstract

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Embodiments relate to a two-transistor (2T) floating-body cell (FBC) for embedded-DRAM applications. Further embodiments pertain to a floating-body/gate cell (FBGC), which yields reduction in power dissipation, in addition to better signal margin, longer data retention, and higher memory density.

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Patent Owner(s)

Patent OwnerAddress
UNIVERSITY OF FLORIDA RESEARCH FOUNDATION INC223 GRINTER HALL GAINESVILLE FL 32611

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fossum, Jerry G Gainesville, US 7 116
Mathew, Leo Austin, US 71 3180
Sadd, Michael Austin, US 11 570
Trivedi, Vishal P Chandler, US 31 222

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