III-V nitride semiconductor device comprising a diamond layer
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United States of America Patent
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Jul 30, 2013
Grant Date -
Jan 13, 2011
app pub date -
Feb 26, 2009
filing date -
Feb 28, 2008
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Abstract
The invention relates to a semiconductor device, in particular to a chemical field effect transistor (ChemFET), a high-electron mobility transistor (HEMT) and an ion-sensitive field effect transistor (ISFET), as well as a method for manufacturing the same. The semiconductor device comprises a structure, the structure comprises a substrate, a first layer comprising GaN and a second layer comprising InAlN, wherein the first and the second layer are arranged parallely to each other on the substrate, and wherein the structure comprises a third layer comprising diamond.
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