Insulating film material, method of film formation using insulating film material, and insulating film
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United States of America Patent
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Jul 30, 2013
Grant Date -
Jun 2, 2011
app pub date -
Jan 20, 2009
filing date -
Jan 23, 2008
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Abstract
An insulating film material for plasma CVD represented by a chemical formula (1) shown below, a method of film formation using the insulating film material, and an insulating film. According to the present invention, an insulating film having a low dielectric constant and a superior copper diffusion barrier property suitable for an interlayer insulating film or the like of a semiconductor device can be obtained. In the chemical formula (1), n represents an integer of 3 to 6, and each of R1 and R2 independently represents one of C2H, C2H3, C3H3, C3H5, C3H7, C4H5, C4H7, C4H9, C5H7, C5H9 and C5H11.
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