Integrated trench guarded schottky diode compatible with powerdie, structure and method
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United States of America Patent
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Jul 23, 2013
Grant Date -
Jun 30, 2011
app pub date -
Nov 3, 2010
filing date -
Dec 30, 2009
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Abstract
A method and structure for a voltage converter including a trench field effect transistor (FET) and a trench guarded Schottky diode which is integrated with the trench FET. In an embodiment, a voltage converter can include a lateral FET, a trench FET, and a trench guarded Schottky diode integrated with the trench FET. A method to form a voltage converter can include the formation of a trench FET gate, a trench guarded Schottky diode gate, and a lateral FET gate using a single conductive layer such as a polysilicon layer.
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