Chemical mechanical polishing stop layer for fully amorphous phase change memory pore cell
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United States of America Patent
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Jul 23, 2013
Grant Date -
Sep 1, 2011
app pub date -
May 6, 2011
filing date -
Aug 28, 2009
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Abstract
A method for fabricating a phase change memory pore cell that includes forming a bottom electrode, forming a dielectric layer on the bottom electrode, and forming a sacrificial layer on the dielectric layer. The method further includes selectively etching portions of the sacrificial layer and the dielectric layer to define a pore extending through the sacrificial layer and the dielectric layer, depositing phase change material on the sacrificial layer and into the pore and removing the phase change material formed outside the pore, removing the sacrificial layer to expose the pore, the pore being vertically aligned, and forming a top electrode over the pore.
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