RF impedance matching network with secondary frequency and sub-harmonic variant
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United States of America Patent
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Jul 23, 2013
Grant Date -
Apr 26, 2012
app pub date -
Oct 20, 2010
filing date -
Oct 20, 2010
priority date (Note) -
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Abstract
Embodiments of the disclosure may provide a matching network for physical vapor deposition. The matching network may include a first RF generator coupled to a deposition chamber target through a first impedance matching network having a first tuning circuit. The first RF generator may be configured to introduce a first AC signal to the deposition chamber target. The matching network may also include a second RF generator coupled to a deposition chamber pedestal through a second impedance matching network. The second RF generator may be configured to introduce a second AC signal to the deposition chamber pedestal. The first tuning circuit may be configured to modify an effect of the second AC signal on plasma formed between the deposition chamber target and the deposition chamber pedestal.
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