Back-side illumination image sensor and method for fabricating back-side illumination image sensor

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United States of America Patent

PATENT NO 8486815
SERIAL NO

13101148

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Abstract

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A method for fabricating a back-side illumination image sensor includes: implanting a first type of dopant into an epitaxial layer disposed over a first side of a substrate layer to form a first dopant layer in a first side of the epitaxial layer; adhering a carry layer over the first dopant layer for carrying the substrate layer; grinding a second side of the substrate layer for exposing a second side of the epitaxial layer; implanting the first type of dopant into the epitaxial layer from the second side of the epitaxial layer to form a second dopant layer in the second side of the epitaxial layer; forming at least one metal layer over the second dopant layer after forming the second dopant layer in the second side of the epitaxial layer; removing the carry layer; and forming a color filtering module over the first dopant layer.

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Patent Owner(s)

Patent OwnerAddress
HIMAX TECHNOLOGIES LIMITEDTAINAN CITY 74148

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Tsung-Chieh Grand Cayman, KY 21 187
Huang, Fang-Ming Grand Cayman, KY 9 23

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