Memory array and method of operating the same

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United States of America Patent

PATENT NO 8482980
APP PUB NO 20130021850A1
SERIAL NO

13206643

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A memory device comprises at least one memory array on a semiconductor substrate. Each said memory array comprises a page control line and a plurality of pages, each said page is arranged in a row comprising a plurality of bytes which couple to a page control transistor with its drain terminal connected to the page control line. Each said byte includes at least one memory cell. Said memory array further comprises a plurality of source control devices which are configured to provide either predetermined biases or floating potentials to source lines, each said source line couples to all the bytes on the same byte segment of the memory array. Read, erase, and program methods are provided to operate said memory devices in byte addressable fashion.

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Patent Owner(s)

Patent OwnerAddress
GIANTEC SEMICONDUCTOR LTD INCNO 12 LANE 647 SONGTAO ROAD ZHANGJIANG HI-TECH PARK PUDONG NEW DISTRICT SHANGHAI 201203 201203

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Yuan, Qing Peng Shanghai, CN 2 6

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