Method for preparing a light-emitting device using gas cluster ion beam processing
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United States of America Patent
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Jul 9, 2013
Grant Date -
Dec 22, 2011
app pub date -
Mar 29, 2011
filing date -
Jun 16, 2010
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Abstract
A method of manufacturing semiconductor-based light-emitting devices, such as light-emitting diodes (LEDs), is described. The method comprises irradiating an interface region with a gas cluster ion beam (GCIB) to improve the interface region between a light-emitting device stack and the substrate, within the light-emitting device stack, and/or between the light-emitting device stack and a metal contact layer in an end-type contact.
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