High-dielectric constant thin film metal oxides on silicon wafers for capacitor applications and methods of manufacture
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United States of America Patent
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Jul 9, 2013
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Mar 6, 2008
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Mar 8, 2007
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Abstract
A method of fabrication of high-k paraelectric metal oxide films at low temperatures utilizing ordered mesoporous metal oxide thin films synthesized by organic templating methodology. The process consisting of (a) chemical solution deposition of periodic ordered mesoporous structures containing high-k metal oxide films, (b) removal of organic template additives, (c) infiltration of the pores with an appropriate second phase, and (d) low temperature thermal and/or annealing of infiltrated films.
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