High-purity tellurium dioxide single crystal and manufacturing method thereof
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United States of America Patent
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Jul 9, 2013
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Mar 22, 2012
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Apr 2, 2010
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Apr 3, 2009
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Abstract
A high-purity tellurium dioxide (TeO2) single crystal and its manufacturing method are provided. The method comprises the following procedures: firstly performing a first single crystal growth, and then dissolving the resulting single crystal again, thereafter adding a precipitation agent to form powder, and finally performing a second single crystal growth of as-prepared powder to obtain the high purity single crystal. The TeO2 single crystal prepared according to present invention is of high purity, especially with a content of radioactive impurities such as U and Th decreased to a level of 10−13 g/g.
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