Method and apparatus for monitoring mask process impact on lithography performance
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United States of America Patent
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Jul 2, 2013
Grant Date -
Oct 6, 2011
app pub date -
Apr 1, 2010
filing date -
Apr 1, 2010
priority date (Note) -
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status (Latency Note)
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Abstract
The present disclosure is directed generally to a method and apparatus for monitoring mask process impact on lithography performance. A method including receiving a physical wafer pattern according to a mask, extracting a mask contour from the mask, and extracting a deconvolution pattern based on the mask contour. A lithography process is simulated to create a virtual wafer pattern based on the deconvolution pattern. The virtual wafer pattern is then compared to the physical wafer pattern.
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Cited Art Landscape
Patent Citation Ranking
- 1 Citation Count
- G01C Class
- 4.35 % this patent is cited more than
- 12 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Jan 2, 2025 |
