Semiconductor device
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United States of America Patent
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Jul 2, 2013
Grant Date -
May 12, 2011
app pub date -
Jan 12, 2011
filing date -
Nov 12, 2008
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Abstract
A semiconductor device includes a semiconductor substrate; an n-channel MOS transistor including a first gate insulating film provided on a p-type layer, a first gate electrode made of TiN, and a first upper gate electrode made of semiconductor doped with impurities; and a p-channel MOS transistor including a second gate insulating film provided on an n-type layer, a second gate electrode including at least as a part, a TiN layer made of TiN crystal in which a ratio of (111) orientation/(200) orientation is about 1.5 or more, and a second upper gate electrode made of semiconductor doped with impurities.
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