Semiconductor device and method for manufacturing the same
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United States of America Patent
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Jul 2, 2013
Grant Date -
Nov 24, 2011
app pub date -
Feb 17, 2011
filing date -
May 21, 2010
priority date (Note) -
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Abstract
A semiconductor device includes: a semiconductor substrate; a gate electrode formed on the semiconductor substrate with a gate insulating film interposed therebetween; a side wall spacer formed on a side wall of the gate electrode; source/drain regions formed in opposing portions of the semiconductor substrate with the gate electrode and the side wall spacer interposed therebetween; and a stress-applying insulating film covering the gate electrode, the side wall spacer, and an upper surface of the semiconductor substrate. A gate-length-direction thickness of an upper portion of the side wall spacer is at least larger than a gate-length-direction thickness of a middle portion thereof.
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