Method of manufacturing single crystal silicon wafer from ingot grown by Czocharlski process with rapid heating/cooling process
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United States of America Patent
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Jul 2, 2013
Grant Date -
Feb 18, 2010
app pub date -
Jul 30, 2009
filing date -
Jul 31, 2008
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Abstract
A silicon wafer produced from a silicon single crystal ingot grown by Czochralski process is subjected to rapid heating/cooling thermal process at a maximum temperature (T1) of 1300° C. or more, but less than 1380° C. in an oxidizing gas atmosphere having an oxygen partial pressure of 20% or more, but less than 100%. The silicon wafer according to the invention has, in a defect-free region (DZ layer) including at least a device active region of the silicon wafer, a high oxygen concentration region having a concentration of oxygen solid solution of 0.7×1018 atoms/cm3 or more and at the same time, the defect-free region contains interstitial silicon in supersaturated state.
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