Deep contacts of integrated electronic devices based on regions implanted through trenches
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United States of America Patent
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Jul 2, 2013
Grant Date -
Jan 17, 2013
app pub date -
Jan 12, 2012
filing date -
Dec 14, 2007
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Abstract
An embodiment of an integrated circuit includes first and second semiconductor layers and a contact region disposed in the second layer. The first semiconductor layer is of a first conductivity, and the second semiconductor layer is disposed over the first layer and has a surface. The contact region is contiguous with the surface, contacts the first layer, includes a first inner conductive portion, and includes an outer conductive portion of the first conductivity. The contact region may extend deeper than conventional contact regions, because where the inner conductive portion is formed from a trench, doping the outer conductive portion via the trench may allow one to implant the dopants more deeply than conventional techniques allow.
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