Wafer structure and epitaxial growth method for growing the same
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United States of America Patent
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Jul 2, 2013
Grant Date -
Jul 16, 2009
app pub date -
Mar 13, 2009
filing date -
Jan 7, 2005
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Abstract
A wafer structure and epitaxial growth method for growing the same. The method may include forming a mask layer having nano-sized areas on a wafer, forming a porous layer having nano-sized pores on a surface of the wafer by etching the mask layer and a surface of the wafer, and forming an epitaxial material layer on the porous layer using an epitaxial growth process.
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