Semiconductor device and method for fabricating the same
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United States of America Patent
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Jun 25, 2013
Grant Date -
Jun 17, 2010
app pub date -
Feb 25, 2010
filing date -
Aug 4, 2008
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Abstract
A semiconductor device includes a first MIS transistor formed on a first active region, and a second MIS transistor formed on a second active region. The first MIS transistor includes a first gate insulating film, and a first gate electrode including a first metal film and a first silicon film. The second MIS transistor includes a second gate insulating film, and a second gate electrode including the first metal film, a second metal film, and a second silicon film.
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