Method for forming a multilayer structure
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United States of America Patent
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Jun 25, 2013
Grant Date -
May 10, 2012
app pub date -
Nov 10, 2011
filing date -
Nov 10, 2010
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Abstract
The method for forming a multilayer structure on a substrate comprises providing a stack successively comprising an electron hole blocking layer, a first layer made from N-doped semiconductor material having a dopant concentration greater than or equal to 1018 atoms/cm3 or P-doped semiconductor material, and a second layer made from semiconductor material of different nature. A lateral electric contact pad is made between the first layer and the substrate, and the material of the first layer is subjected to anodic treatment in an electrolyte.
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