Hydrogen ion-sensitive field effect transistor and manufacturing method thereof
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United States of America Patent
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Jun 18, 2013
Grant Date -
Jul 14, 2011
app pub date -
Mar 16, 2010
filing date -
Jan 11, 2010
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Abstract
A hydrogen ion-sensitive field effect transistor and a manufacturing method thereof are provided. The hydrogen ion-sensitive field effect transistor includes a semiconductor substrate, an insulating layer, a transistor gate, and a sensing film. A gate area is defined on the semiconductor substrate having a source area and a drain area. The insulating layer is formed within the gate area on the semiconductor substrate. The transistor gate is deposited within the gate area and includes a first gate layer. Further, the first gate layer is an aluminum layer, and a sensing window is defined thereon. The sensing film is an alumina film formed within the sensing window by oxidizing the first gate layer. Thus, the sensing film is formed without any film deposition process, and consequently the manufacturing method is simplified.
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