Process of internal gettering for Czochralski silicon wafer
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United States of America Patent
Stats
-
Jun 18, 2013
Grant Date -
Feb 21, 2013
app pub date -
Mar 16, 2012
filing date -
Mar 23, 2011
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
An internal gettering process for a Czochralski silicon wafers comprises: (1) heating a Cz silicon wafer to 1200-1250° C. at a heating rate of 50-100° C./s under a nitrogen atmosphere, maintaining for 30-150 seconds, cooling the Cz silicon wafer to 800-1000° C. first at a cooling rate of 5-50° C./s, and then cooling the Cz silicon wafer naturally; (2) annealing the Cz silicon wafer obtained in the step (1) at 800-900° C. under an argon atmosphere for a period of 8-16 hours. The present invention only involves two heat treatment steps which require lower temperature and shorter time comparing to the conventional processes. The density of the bulk microdefects and the width of the denuded zone can be easily controlled by the temperature, duration and cooling rate of rapid thermal processing in the first step.
First Claim
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International Classification(s)
- 2012 Application Filing Year
- H01L Class
- 20465 Applications Filed
- 18077 Patents Issued To-Date
- 88.34 % Issued To-Date
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Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Dec 18, 2024 |
