Extending the field of view of a mask-inspection image
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United States of America Patent
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Jun 11, 2013
Grant Date -
Aug 11, 2011
app pub date -
Feb 5, 2010
filing date -
Feb 5, 2010
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Abstract
A technique for determining photo-mask defect disposition is described. In this technique, a target mask pattern is used to expand an initial region in a photo-mask that is included in an initial mask-inspection image. In particular, a revised mask-inspection image that includes the initial region and a region surrounding the initial region is generated based on the initial mask-inspection image and the target mask pattern. Then a corresponding simulated mask pattern is calculated in an inverse optical calculation using the revised mask-inspection image and an optical model of the mask-inspection system. This simulated mask pattern is used to simulate a wafer pattern in a photo-lithographic process, and disposition of a possible defect in the initial region is subsequently determined based on the simulated wafer pattern and a target wafer pattern.
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