Method for Operating a High Density Multi-Level Cell Non-Volatile Flash Memory Device
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United States of America Patent
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Jun 11, 2013
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Jun 20, 2013
app pub date -
Dec 15, 2011
filing date -
Dec 15, 2011
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Abstract
A localized trapping multi-level memory cell operating method includes the following steps. First, a localized trapping memory cell with the initial threshold voltage of ˜2.5V is provided. Next, an erasing operation is performed to obtain a negative threshold level which has the uniform distribution along the channel region. Taking into account the over-erasure issue in the erasing course, a programming operation is performed to precisely adjust the threshold voltage to a predetermined level of −2V˜−1V. Then, with the negative voltage as a new initial state, corresponding programming operation is performed and electrons are locally injected the storage layer. By controlling the quantity of injected electrons, the MLC storage is achieved.
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