Process for producing a metallization level and a via level and corresponding integrated circuit

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8461046
APP PUB NO 20120018889A1
SERIAL NO

13187326

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A process for producing an upper metallization level and a via level connecting this upper metallization level to a lower metallization level includes: producing an insulating region on the lower metallization level; producing a hard mask on the insulating region (4, 5) defining the position of the via and metallic line of the upper metallization level; etching the insulating region through the hard mask so as to form a cavity; cleaning the cavity (which forms an undercut at the interface between the hard mask and the insulating region); and completely filling the cavity. The step of completely filling includes at least partially filling the cavity with copper and plugging the undercut. The undercut is plugged by sputtering a plugging material and forming an overlying doped copper layer.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
STMICROELECTRONICS (CROLLES 2) SAS850 RUE JEAN MONNET CROLLES 38920

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Vannier, Patrick Le Versoud, FR 5 38

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation