Spacer and process to enhance the strain in the channel with stress liner
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United States of America Patent
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Jun 11, 2013
Grant Date -
Aug 30, 2007
app pub date -
Feb 28, 2006
filing date -
Feb 28, 2006
priority date (Note) -
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Abstract
Process for enhancing strain in a channel with a stress liner, spacer, process for forming integrated circuit and integrated circuit. A first spacer composed of an first oxide and first nitride layer is applied to a gate electrode on a substrate, and a second spacer composed of a second oxide and second nitride layer is applied. Deep implanting of source and drain in the substrate occurs, and removal of the second nitride, second oxide, and first nitride layers.
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