Bipolar semiconductor device and manufacturing method thereof
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United States of America Patent
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Jun 11, 2013
Grant Date -
Jan 7, 2010
app pub date -
Jun 9, 2006
filing date -
Jun 13, 2005
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Abstract
A semiconductor crystal includes a recombination-inhibiting semiconductor layer (17) of a second conductive type that is disposed in the vicinity of the surface between a base contact region (16) and emitter regions (14) and that separates the semiconductor surface having a large number of surface states from the portion that primarily conducts the positive hole electric current and the electron current. Recombination is inhibited, and the current amplification factor is thereby improved and the ON voltage reduced.
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