Integrated circuitry, switches, and methods of selecting memory cells of a memory device

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United States of America Patent

PATENT NO 8456947
APP PUB NO 20120230128A1
SERIAL NO

13050630

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Abstract

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Some embodiments include switches that have a graphene structure connected to a pair of spaced-apart electrodes. The switches may further include first and second electrically conductive structures on opposing sides of the graphene structure from one another. The first structure may extend from one of the electrodes, and the second structure may extend from the other of the electrodes. Some embodiments include the above-described switches utilized as select devices in memory devices. Some embodiments include methods of selecting memory cells.

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Patent Owner(s)

Patent OwnerAddress
OVONYX MEMORY TECHNOLOGY LLC1940 DUKE STREET SUITE 200 ALEXANDRIA VA 22314

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sandhu, Gurtej S Boise, US 1223 33846

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