Integrated circuit system employing gate shield and/or ground shield
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United States of America Patent
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Jun 4, 2013
Grant Date -
Feb 21, 2008
app pub date -
Aug 18, 2006
filing date -
Aug 18, 2006
priority date (Note) -
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Abstract
A method for manufacturing an integrated circuit system that includes: forming a substrate with an active region; depositing a material over the substrate to act as an etch stop and define a source and a drain; depositing a first dielectric over the substrate; processing the first dielectric to form features within the first dielectric including a shield; and depositing fill within the features to electrically connect the shield to the source of the active region by a single process step.
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