Manufacturing method of semiconductor device
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United States of America Patent
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Jun 4, 2013
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N/A
app pub date -
Oct 7, 2008
filing date -
Oct 10, 2007
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To realize high performance and low power consumption of a semiconductor device by controlling electric characteristics of a transistor in accordance with a required function. Further, to manufacture such a semiconductor device with high yield and high productivity without complicating a manufacturing process. An impurity element imparting one conductivity type is added to a semiconductor substrate in order to control the threshold voltage of a transistor included in the semiconductor device, before separating a semiconductor layer of the transistor from the semiconductor substrate and transferring the semiconductor layer to a supporting substrate that is a substrate having an insulating surface.
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