Method of forming a waveguide in diamond

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United States of America Patent

PATENT NO 8455278
APP PUB NO 20120058602A1
SERIAL NO

13295752

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Abstract

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N-V centers in diamond are created in a controlled manner. In one embodiment, a single crystal diamond is formed using a CVD process, and then annealed to remove N-V centers. A thin layer of single crystal diamond is then formed with a controlled number of N-V centers. The N-V centers form Qubits for use in electronic circuits. Masked and controlled ion implants, coupled with annealing are used in CVD formed diamond to create structures for both optical applications and nanoelectromechanical device formation. Waveguides may be formed optically coupled to the N-V centers and further coupled to sources and detectors of light to interact with the N-V centers.

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Patent Owner(s)

Patent OwnerAddress
SCIO DIAMOND TECHNOLOGY CORPORATION109 THORNBLADE BOULEVARD GREER SC 29650

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Doering, Patrick J Holliston, US 39 496
Dromeshauser, William W Norwell, US 7 37
Genis, Alfred R East Douglas, US 7 37
Linares, Bryant Sherborn, US 6 72
Linares, Robert C Sherborn, US 48 534

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