Method for depositing hydrogenated diamond-like carbon films using a gas cluster ion beam

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United States of America Patent

PATENT NO 8455060
APP PUB NO 20100209627A1
SERIAL NO

12389010

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Abstract

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A method for depositing a hydrogenated diamond-like carbon (H-DLC) film on a surface of a substrate. The method includes maintaining a reduced-pressure environment around a substrate holder for holding a substrate, holding the substrate securely within the reduced-pressure environment, and forming a gas cluster ion beam (GCIB) from a pressurized gas containing hydrocarbon gas and a carrier gas. The method further includes accelerating the GCIB to the reduced-pressure environment, irradiating the accelerated GCIB onto at least a portion of the surface of the substrate, and forming an H-DLC film on the surface.

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Patent Owner(s)

Patent OwnerAddress
TEL EPION INC37 MANNING ROAD BILLERICA MA 01821

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Tabat, Martin D Nashua, US 22 433

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