Nonvolatile semiconductor memory device using MIS transistor
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United States of America Patent
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May 28, 2013
Grant Date -
Aug 16, 2012
app pub date -
Feb 14, 2011
filing date -
Feb 14, 2011
priority date (Note) -
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Abstract
A nonvolatile semiconductor memory device includes an MIS transistor having nodes, a control circuit configured to apply a first set of potentials to the nodes to cause an irreversible change in transistor characteristics, to apply a second set of potentials to the nodes to cause a first current to flow through the MIS transistor in a first direction, and to apply the second set of potentials to the nodes to cause a second current to flow through the MIS transistor in a second direction opposite the first direction, and a sense circuit configured to produce a signal responsive to a difference between the first current and the second current.
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