Semiconductor device
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United States of America Patent
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May 21, 2013
Grant Date -
Jan 5, 2012
app pub date -
Nov 30, 2010
filing date -
Jul 2, 2010
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor device includes a first metal wiring which is formed over substructure; a first contact plug which is coupled to the first metal wiring and passes through a first interlayer insulating film provided over the substructure; a second metal wiring which is provided over the first interlayer insulating film and is coupled to the first contact plug; a second contact plug which is coupled to the second metal wiring and passes through a second interlayer insulating film which is provided over the first interlayer insulating film; and a fuse pattern and a data read fuse pattern which are coupled to the second contact plug and provided over the second interlayer insulating film.
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