Asymmetrically recessed high-power and high-gain ultra-short gate HEMT device
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United States of America Patent
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May 21, 2013
Grant Date -
Dec 2, 2010
app pub date -
Aug 5, 2009
filing date -
May 26, 2009
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Abstract
A high-power and high-gain ultra-short gate HEMT device has exceptional gain and an exceptionally high breakdown voltage provided by an increased width asymmetric recess for the gate electrode, by a composite channel layer including a thin indium arsenide layer embedded in the indium gallium arsenide channel layer and by double doping through the use of an additional silicon doping spike. The improved transistor has an exceptional 14 dB gain at 110 GHz and exhibits an exceptionally high 3.5-4 V breakdown voltage, thus to provide high gain, high-power and ultra-high frequency in an ultra-short gate device.
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