Semiconductor device and method of manufacturing the same
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United States of America Patent
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May 21, 2013
Grant Date -
Sep 13, 2012
app pub date -
Jan 10, 2012
filing date -
Mar 11, 2011
priority date (Note) -
Expired
status (Latency Note)
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Abstract
According to an embodiment of a semiconductor device and a method of manufacturing the same, buried gates are formed in a semiconductor substrate including a cell region and a peripheral region, with the cell region and the peripheral region formed to have a step therebetween. Next, a spacer is formed in a region between the cell region and the peripheral region to block an oxidation path between a gate oxide layer and another insulating layer. Embodiments may reduce damage to active regions and prevent IDD failure because a gate pattern is formed on a guard region provided at a periphery of the cell region.
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