Method of fabricating a differential doped solar cell

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United States of America Patent

PATENT NO 8445311
APP PUB NO 20120164779A1
SERIAL NO

13303126

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Abstract

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A method of fabricating a differential doped solar cell is provided. The method comprises the steps of (a) providing a light doped semiconductor substrate; (b) forming a heavy doped layer having the same type of dopant used in step (a) on a front surface of the semiconductor substrate; and (c) forming an emitter layer having a different type of dopant used in step (a) on a surface of the heavy doped layer to constitute a p-n junction with the heavy doped layer.

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Patent Owner(s)

Patent OwnerAddress
BIG SUN ENERGY TECHNOLOGY INCORPORATION30353 HSINCHU COUNTY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Chi-Hsiung Hukou Township, Hsinchu County, TW 7 32
Chang, Hung-Yi Hukou Township, Hsinchu County, TW 130 544
Chang, Kuan-Lun Hukou Township, Hsinchu County, TW 12 96
Chiu, Ying-Yen Hukou Township, Hsinchu County, TW 3 0
Pan, Yi-Min Hukou Township, Hsinchu County, TW 2 0
Wu, Jun-Min Hukou Township, Hsinchu County, TW 2 0

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