Semiconductor device and fabricating method thereof

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United States of America Patent

PATENT NO 8444793
SERIAL NO

12701615

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Abstract

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The present invention provides a semiconductor device and a fabricating method thereof. The fabricating method comprises: providing a first substrate; forming a soft dry film having an adhesive film and a release film; sticking the soft dry film on the first substrate with the adhesive film; removing the release film; sticking a second substrate on the adhesive film; and heating the adhesive film to solidify the adhesive film to form a solid adhesive film. The semiconductor device comprises: a first substrate, a solid adhesive film, and a second substrate. The solid adhesive film is formed on the first substrate, and the second substrate is formed on the solid adhesive film.

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Patent Owner(s)

Patent OwnerAddress
HIMAX TECHNOLOGIES LIMITEDTAINAN CITY 74148

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ho, Shu-Lin Tainan County, TW 9 38
Hsiung, Hsin-Chang Tainan County, TW 3 11

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