GCIB process for reducing interfacial roughness following pre-amorphization
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 14, 2013
Issued Date -
N/A
app pub date -
Mar 28, 2011
filing date -
Mar 28, 2011
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method for amorphizing a layer on a substrate is described. In one embodiment, the method includes treating the substrate with a first gas cluster ion beam (GCIB) using a first beam energy selected to yield an amorphous sub-layer within the substrate of a desired thickness, which produces a first interfacial roughness of an amorphous-crystal interface between the amorphous sub-layer and a crystalline sub-layer of the substrate. The method further includes treating the substrate with a second GCIB using a second beam energy, less than the first beam energy, to reduce the first interfacial roughness of the amorphous-crystal interface to a second interfacial roughness.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully